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HIP2100 Data Sheet October 1998 File Number 4022.2 100V/2A Peak, Low Cost, High Frequency Half Bridge Driver The HIP2100 is a high frequency, 100V Half Bridge N-Channel MOSFET driver IC, available in 8 lead plastic SOIC. The low-side and high-side gate drivers are independently controlled and matched to 8ns. This gives the user maximum flexibility in dead-time selection and driver protocol. Undervoltage protection on both the low-side and high-side supplies force the outputs low. An on-chip diode eliminates the discrete diode required with other driver ICs. A new level-shifter topology yields the low-power benefits of pulsed operation with the safety of DC operation. Unlike some competitors, the high-side output returns to its correct state after a momentary undervoltage of the high-side supply. Features * Drives N-Channel MOSFET Half Bridge * Space Saving SO8 Package * Bootstrap Supply Max Voltage to 116VDC * On-Chip 1 Bootstrap Diode * Fast Propagation Times Needed for Multi-MHz Circuits * Drives 1000pF Load at 1MHz with Rise and Fall Times of Typically 10ns * CMOS Input Thresholds for Improved Noise Immunity * Independent Inputs for Non-Half Bridge Topologies * No Start-Up Problems * Outputs Unaffected by Supply Glitches, HS Ringing Below Ground, or HS Slewing at High dv/dt * Low Power Consumption * Wide Supply Range * Supply Undervoltage Protection Ordering Information PART NUMBER HIP2100IB TEMP. RANGE (oC) PACKAGE PKG. NO. M8.15 * 3 Output Resistance -40oC to 85oC 8 Ld SOIC (N) Applications * Telecom Half Bridge Power Supplies * Avionic DC-DC Converters * Two-Switch Forward Converters * Active Clamp Forward Converters Pinout HIP2100 (SOIC) TOP VIEW Application Block Diagram +100V +12V VDD HB HO HS 1 2 3 4 8 7 6 5 LO VSS LI HI VDD HB SECONDARY CIRCUIT HI CONTROL DRIVE HI HO HS PWM CONTROLLER LI DRIVE LO LO HIP2100 VSS REFERENCE AND ISOLATION 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright (c) Intersil Corporation 1999 HIP2100 Functional Block Diagram 2 HB VDD 1 UNDER VOLTAGE LEVEL SHIFT DRIVER 4 HI 5 HS 3 HO UNDER VOLTAGE DRIVER LI VSS 6 7 8 LO Other Applications +48V +12V PWM HIP 2100 SECONDARY CIRCUIT ISOLATION FIGURE 1. TWO-SWITCH FORWARD CONVERTER +48V +12V SECONDARY CIRCUIT PWM HIP 2100 ISOLATION FIGURE 2. FORWARD CONVERTER WITH AN ACTIVE CLAMP 2 HIP2100 Absolute Maximum Ratings Supply Voltage, VDD, VHB-VHS . . . . . . . . . . . . . . . . . . -0.3V to 18V LI and HI Voltages . . . . . . . . . . . . . . . . . . . . . . . . -3V to VDD +0.3V Voltage on LO . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to VDD +0.3V Voltage on HO . . . . . . . . . . . . . . . . . . . . . . VHS -0.3V to VHB +0.3V Voltage on HS (Continuous) . . . . . . . . . . . . . . . . . . . . . -1V to 110V Voltage on HB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +118V Average Current in VDD to HB diode . . . . . . . . . . . . . . . . . . . 100mA ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1 (1kV) NOTE: All Voltages Relative to Pin 7, VSS Unless Otherwise Specified Thermal Information Thermal Resistance JA JC SOIC . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160oC/W N/A SOIC in Thermal Conductive Media. . . . . . . . . . . . . . . . . 70oC/W HS Slew Rate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10V/ns Storage Temperature Range . . . . . . . . . . . . . . . . . . -65oC to 150oC Junction Temperature Range. . . . . . . . . . . . . . . . . . -55oC to 150oC Lead Temperature (Soldering 10s - Lead Tips Only) . . . . . . . 300oC Maximum Power Dissipation at +25oC in Free Air. . . . . . . . 780mW CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the recommended operating conditions of this specification is not implied. Recommended Operating Conditions Supply Voltage, VDD . . . . . . . . . . . . . . . . . . . . . . . . . +9V to +16.5V Voltage on HS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -1V to 100V Voltage on HS . . . . . . . . . . . . . . . (Repetitive Transient) -5V to 105V Voltage on HB VHS +8V to VHS +16.5V and VDD -1V to VDD +100V Electrical Specifications VDD = VHB = 12V, VSS = VHS = 0V, No Load on LO or HO, Unless Otherwise Specified TJ = 25oC TJ = - 40oC TO 125oC MAX MIN MAX UNITS PARAMETERS SUPPLY CURRENTS VDD Quiescent Current VDD Operating Current Total HB Quiescent Current Total HB Operating Current HB to VSS Current, Quiescent HB to VSS Current, Operating INPUT PINS Low Level Input Voltage Threshold High Level Input Voltage Threshold Input Voltage Hysteresis Input Pulldown Resistance UNDER VOLTAGE PROTECTION VDD Rising Threshold VDD Threshold Hysteresis HB Rising Threshold HB Threshold Hysteresis BOOT STRAP DIODE Low-Current Forward Voltage High-Current Forward Voltage Dynamic Resistance LO GATE DRIVER Low Level Output Voltage High Level Output Voltage Peak Pullup Current Peak Pulldown Current HO GATE DRIVER Low Level Output Voltage High Level Output Voltage Peak Pullup Current Peak Pulldown Current SYMBOL TEST CONDITIONS MIN TYP IDD IDDO IHB IHBO IHBS IHBSO VIL VIH VIHYS RI VDDR VDDH VHBR VHBH VDL VDH RD VOLL VOHL IOHL IOLL VOLH VOHH IOHH IOLH LI = HI = 0V f = 500kHz LI = HI = 0V f = 500kHz VHS = VHB = 116.5V f = 500kHz - 0.1 1.5 0.1 1.5 0.05 0.7 0.15 2.5 0.15 2.5 1 - - 0.2 3 0.2 3 10 - mA mA mA mA A mA 4 - 5.4 5.8 0.4 200 7 - 3 100 8 500 V V V k 7 6.5 - 7.3 0.5 6.9 0.4 7.8 7.5 - 6.5 6 - 8 8 - V V V V IVDD-HB = 100A IVDD-HB = 100mA IVDD-HB = 100mA ILO = 100mA ILO = -100mA, VOHL = VDD-VLO VLO = 0V VLO = 12V IHO = 100mA IHO = -100mA, VOHH = VHB-VHO VHO = 0V VHO = 12V - 0.45 0.7 0.8 0.55 0.8 1 - 0.7 1 1.5 V V V V A A - 0.25 0.25 2 2 0.3 0.3 - - 0.4 0.4 - - 0.25 0.25 2 2 0.3 0.3 - - 0.4 0.4 - V V A A 3 HIP2100 Switching Specifications VDD = VHB = 12V, VSS = VHS = 0V, No Load on LO or HO, Unless Otherwise Specified TJ = 25oC MIN CL = 1000pF CL = 0.1F CL = IRFR120 CL = IRFR120 TYP 20 20 20 20 2 2 10 0.5 20 10 10 MAX 35 35 35 35 8 8 0.6 TJ = - 40oC TO 125oC MIN MAX 45 45 45 45 10 10 0.8 50 UNITS ns ns ns ns ns ns ns us ns ns ns ns PARAMETERS Lower Turn-Off Propagation Delay (LI Falling to LO Falling) Upper Turn-Off Propagation Delay (HI Falling to HO Falling) Lower Turn-On Propagation Delay (LI Rising to LO Rising) Upper Turn-On Propagation Delay (HI Rising to HO Rising) Delay Matching: Lower Turn-On and Upper Turn-Off Delay Matching: Lower Turn-Off and Upper Turn-On Either Output Rise/Fall Time Either Output Rise/Fall Time (3V to 9V) Either Output Rise Time Driving DMOS Either Output Fall Time Driving DMOS Minimum Input Pulse Width that Changes the Output Bootstrap Diode Turn-On or Turn-Off Time SYMBOL tLPHL tHPHL tLPLH tHPLH tMON tMOFF tRC,tFC tR,tF tRD tFD tPW tBS TEST CONDITIONS Pin Descriptions PIN NUMBER 1 2 3 4 5 6 7 8 SYMBOL VDD HB HO HS HI LI VSS LO DESCRIPTION Positive Supply to lower gate drivers. De-couple this pin to VSS (Pin 7). Bootstrap diode connected to HB (pin 2). High-Side Bootstrap supply. External bootstrap capacitor is required. Connect positive side of bootstrap capacitor to this pin. Bootstrap diode is on-chip. High-Side Output. Connect to gate of High-Side power MOSFET. High-Side Source connection. Connect to source of High-Side power MOSFET. Connect negative side of bootstrap capacitor to this pin. High-Side input. Low-Side input. Chip negative supply, generally will be ground. Low-Side Output. Connect to gate of Low-Side power MOSFET. Timing Diagrams LI HI, LI tHPLH , tLPLH HO, LO tHPHL, tLPHL HI LO tMON HO tMOFF FIGURE 3. FIGURE 4. 4 HIP2100 Typical Performance Curves 10 10 IDDO, IHBO (mA) 0.1 T = 150oC T = 125oC T = 25oC T = -40oC IHBSO (mA) 1 1 T = 150oC T = -40oC T = 125oC T = 25oC 0.1 0.01 10 100 FREQUENCY (kHz) 1000 0.01 10 100 FREQUENCY (kHz) 1000 FIGURE 5. OPERATING CURRENT vs FREQUENCY FIGURE 6. LEVEL SHIFTER CURRENT vs FREQUENCY 500 500 VHB = VDD = 9V 400 VOHL, VOHH (mV) VHB = VDD = 12V VHB = VDD = 14V VHB = VDD = 16.5V 300 VOLL, VOLH (mV) 400 VHB = VDD = 9V VHB = VDD = 12V VHB = VDD = 14V VHB = VDD = 16.5V 300 200 200 100 -50 0 50 TEMPERATURE (oC) 100 150 100 -50 0 50 TEMPERATURE (oC) 100 150 FIGURE 7. HIGH LEVEL OUTPUT VOLTAGE vs TEMPERATURE FIGURE 8. LOW LEVEL OUTPUT VOLTAGE vs TEMPERATURE 7.6 0.54 7.4 VHBR, VDDR (mV) VDDR 7.2 VHBH, VDDH (mV) 0.5 VDDH 0.46 0.42 7.0 VHBR 6.8 0.38 VHBH 0.34 6.6 -50 0 50 TEMPERATURE (oC) 100 150 0.3 -50 0 50 TEMPERATURE (oC) 100 150 FIGURE 9. UNDERVOLTAGE LOCKOUT THRESHOLD vs TEMPERATURE FIGURE 10. UNDERVOLTAGE LOCKOUT HYSTERESIS vs TEMPERATURE 5 HIP2100 Typical Performance Curves 30 tLPLH, tLPHL, tHPLH, tHPHL (ns) tHPHL tHPLH 25 tLPHL IHO, ILO (A) 100 150 tLPLH 1.5 2.0 (Continued) 2.5 1.0 20 0.5 15 -50 0 0 50 TEMPERATURE (oC) 0 2 4 6 VHO, VLO (V) 8 10 12 FIGURE 11. PROPAGATION DELAYS vs TEMPERATURE FIGURE 12. PULLUP CURRENT vs OUTPUT VOLTAGE 2.5 1 FORWARD CURRENT (A) 2.0 0.1 0.01 ILO, IHO (A) 1.5 0.001 1*10-4 1*10-5 1*10-6 0.3 1.0 0.5 0 0 2 4 6 VLO, VHO (V) 8 10 12 0.4 0.5 0.6 0.7 0.8 FORWARD VOLTAGE (V) FIGURE 13. PULLDOWN CURRENT vs OUTPUT VOLTAGE FIGURE 14. BOOTSTRAP DIODE I-V CHARACTERISTICS 60 50 IHB vs VHB IDD , IHB (A) 40 IDD vs VDD 30 20 10 0 0 5 10 VDD , VHB (V) 15 FIGURE 15. BIAS CURRENT vs VOLTAGE 6 HIP2100 All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (407) 724-7000 FAX: (407) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil (Taiwan) Ltd. 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029 7 |
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